MSCSM120AM03CT6LIAG
MOSFET 1200V Full SiC MOS + SiC Diode
| ID Code: | 185252 |
| Hersteller: | Microsemi / Microchip Technology |
| Preis inkl. MwSt. : | 1 532,5478 € |
| Preis ohne MwSt. : | 1 266,5684 € |
| MwSt.: | 21 % |
| Verfügbarkeit: | auf Anfrage |
| Gesamtbestand: | 0 Stück |
| Herstellerkennzeichnung: | MSCSM120AM03CT6LIAG |
| Zentrallager Zdice: | 0 Stück |
| Externlager Karlsbad (Lieferzeit 5÷10 Tage): | 0 Stück |
| Einheit:: | Stück |
| !_prehled mnozstevnich slev_! | Anzahl | Preis ohne MwSt. | Preis inkl. MwSt. |
| 1 + | 1 266,5684 € | 1 532,5478 € |
| 3 + | 1 139,9153 € | 1 379,2975 € |
MOSFET 1200V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM120AM03CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Grundlegende Informationen:
| Herstellerkennzeichnung | MSCSM120AM03CT6LIAG |
| Gehäusetyp: | MODUL |
| Gehäuse: | !_modul-t6li_! |
| Kategorie | Full SiC (MOS+D) |
| Art der Komponente: | !_n-mosfet_! |
| Konfiguration: | !_half bridge_! |
| RoHS | Ja |
| REACH | Nein |
| NOVINKA | A |
| RoHS1 | Ano |
| UL94 | V-0 |
Elektrische Parameter:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 805 [A] |
| Idc max (Tc/Ta=25°C) | 805 [A] |
| Idc max (Tc/Ta=80÷89°C) | 640 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| IR (Rückstrom) | 1200 [µA] |
| Pd -s chladičem (Tc=25°C) | 3215 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 3.1 [mΩ] |
| trr Wiederherstellungszeit (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf (turn-off=fall time) | 67 [ns] |
| Ft (transition/operation frequency) (@Inom.) | 0.06 [MHz] |
| Qg (Total Gate Charge) | 2320 [nC] |
| Cin/CL Load Capacitance | 30200 pF |
Material, Farbe, Design:
| Art des Materials: | !_sic full_! |
| Material Base | Cu |
Thermische und mechanische Parameter:
| Tmin (minimale Arbeitstemperatur) | -40 [°C] |
| Tmax (maximale Arbeitstemperatur) | 175 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.047 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.126 [°C/W] |
Abmessungen:
| Abmessungen der Anschlüsse | 0.00 [mm] |
Verpackung und Gewicht:
| Einheit: | Stück |
| Gewicht: | 320 [g] |
| VPE-Karton: | 6 |
!_souvisejici zbozi_! - MSCSM120AM03CT6LIAG
 |
I+SEMITRANS3- 62x106=005W-AL Thermally Conductive Pad for insulated Packages as SEMITRANS-3 and in size 62x106mm ID: 176035 Hersteller-Nr.: F05-AL2-62x106mm
| Gesamtbestand: 922 Hersteller: - |
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